pnp bd202 ? bd204 npn BD201 ? bd203 comset semiconductors 1/3 the bd202 and bd204 are pnp transistors mo unted in jedec to-220 plastic package. they are primarily intended for use in if-hi equipm ent delivering an output of 15 to 25 w into 4 ? or 8 ? load. npn complements are BD201 and bd203 absolute maximum ratings symbol ratings value unit bd202 45 -v ceo collector-emitter voltage bd204 60 v bd202 60 -v cbo collector-base voltage bd204 60 v bd202 -v ebo emitter-base voltage bd204 5.0 v bd202 -i c bd204 8 a bd202 -i c collector current -i cm bd204 12 a bd202 -i csm collector current (non-r epetitive peak value,t p max.2 ms) bd204 25 a bd202 -i b base current bd204 3 a bd202 p d total device dissipation @ t c = 25 bd204 60 watts bd202 t j junction temperature bd204 150 c bd202 t stg storage temperature range bd204 -65 to +200 c thermal characteristics symbol ratings value unit bd202 r thj-a thermal resistance, junction to mounting base bd204 70 k/w bd202 r thj-mb thermal resistance, junction to ambient in free air bd204 2.08 k/w s s i i l l c c o o n n e e p p i i t t a a x x i i a a l l - - b b a a s s e e p p o o w w e e r r t t r r a a n n s s i i t t o o r r s s
pnp bd202 ? bd204 npn BD201 ? bd203 comset semiconductors 3 /3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit bd202 -i ceo collector cutoff current -v ce =30 v, i b =0v bd204 - - 0.2 ma bd202 -i cbo collector cutoff current -v cb =40 v, i e =0v, t j =150c bd204 - - 1 ma bd202 -i ebo emitter cutoff current -v be =5.0 v, i c =0 bd204 - - 0.5 ma bd202 45 - - -v ceo collector emitter breakdown voltage i c =0.2 a, i b =0v bd204 60 - - v bd202 -v be base emitter voltage (1) -i c =3 a, -v ce =2.0 v bd204 - - 1.5 v bd202 -v cek knee voltage (1) -i c =3 a, -i b = value for which -i c =3.3 a at -v ce =2.0 v bd204 - 1 - v -i c =3 a, -v ce =2.0 v bd202 30 - - h fe dc current gain (1) -i c =2 a, -v ce =20 v bd204 30 - - - bd202 -i c =3 a, -i b =0.3 a bd204 - - 1 bd202 -v ce(sat) collector-emitter saturation voltage (1) -i c =6 a, -i b =0.6 a bd204 - - 1.5 bd202 -v be(sat) base-emitter saturation voltage (1) -i c =6 a, -i b =0.6 a bd204 - - 2 v symbol ratings test condition(s) min typ mx unit BD201 f hfe cut-off frequency -i c =0.3 a, -v ce =3.0 v bd203 25 - - khz BD201 f t transition frequency -i c =0.3 a, -v ce =3.0 v f= 1mhz bd203 7 - - mhz BD201 i s/b forward bias second breakdown collector current v ce =40 v,t p = 0.1 s t amb = 25 c bd203 1.5 - - a BD201 h fe1 / h fe2 dc current gain ration of matched complementary pairs -i c =1 a, -v ce =2.0 v bd203 2.5 - - - BD201 t on turn-on time bd203 - - 1 BD201 t off turn-off time ? i con =2 a ? i bon =i boff =0.2 a bd203 - - 2 s (1) pulse conditions : tp < 300 s, =2%
pnp bd202 ? bd204 npn BD201 ? bd203 comset semiconductors 3 /3 mechanical data case to-220 dimensions mm inches a 9,86 0,39 b 15,73 0,62 c 13,37 0,52 d 6,67 0,26 e 4,44 0,17 f 4,21 0,16 g 2,99 0,11 h 17,21 0,68 l 1,29 0,05 m 3,6 0,14 n 1,36 0,05 p 0,46 0,02 r 2,1 0,08 s 5 0,19 t 2,52 0,098 u 0,79 0,03 pin 1 : base pin 2 : collector pin 3 : emitter information furnished is believed to be accurate a nd reliable. however, cs assumes no responsability for the consequences of use of such info rmation nor for errors that could appear. data are subject to change without notice.
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